Influence of Mercaptoethanol Concentration on the Structural, Surface, Optical and Electrical Properties of <Ag/Melt Growth Polished p-Si/n-CdZnS/Ag> Hetero p-n Junction high voltage  Range Tunable Short Diodes

T Prem Kumar; V Muthupriyal; Yonkil Jeongb; Mr Shenbagabalakrishnan; Jae-Hyung Jang; K Sankaranarayanan

doi:10.34293/sijash.v9iS1-May.5945

T Prem Kumar Physics Department, S.N.College, Madurai, Tamilnadu, India RISE & School of Information and Communication, GIST,South Korea
V Muthupriyal Indian Institute of Astrophysics (IIA), Kodaikanal & Koramangala, Bangalore, Karnataka, India
Yonkil Jeongb RISE & School of Information and Communication, GIST,South Korea
Mr Shenbagabalakrishnan Physics Department, S.N.College, Madurai, Tamilnadu, India
Jae-Hyung Jang RISE & School of Information and Communication, GIST,South Korea
K Sankaranarayanan School of Physics, Alagappa University, Karaikudi, Tamilnadu, India

DOI: https://doi.org/10.34293/sijash.v9iS1-May.5945

Abstract

n-CdZnS thin films have been prepared by our in-house designed and developed chemical bath deposition (CBD) instrument using 2-mercaptoethanol as capping agent. The structural properties were investigated through X-ray diffraction (XRD) analysis which results the obtained CdZnS thin films are of hexagonal phase. The surface morphology and surface texture of the fabricated CdZnS thin films were characterized by scanning electron microscopy and atomic force microscopy. Room temperature photoluminescence (PL) spectra recorded the optical properties of CdZnS deposited on p-Silicon<100> substrates, which showed obvious blue shift relative to the CdZnS bulk materials. Electrical properties of the grown p-Si/n-CdZnS hetero-junctions were characterized by current-voltage (I-V) measurements.