World Best Level Efficiency from An Engineered Novel SLG/Mo/p-Cu2ZnSn(Al)Se4/n-CdS/i-ZnO/Al:ZnO/Al Compound Semiconductor Hetero-Junction Thin Film Solar Cells

T Prem Kumar; V Muthupriya; A Antony  Christian  Rajaa; R Sasirekab; R Sumanc

doi:10.34293/sijash.v9iS1-May.5942

T Prem Kumar Physics Department Saraswathi Narayanan College, Madurai, Tamil Nadu, India Former Scientist, RISE, GIST, South Korea
V Muthupriya Indian Institute of Astrophysics (IIA), Koramangala, Bangalore, Karnataka, India
A Antony Christian Rajaa Research Scholar, M.S.University, Tirunelveli, Tamil Nadu, India
R Sasirekab Physics Department, SRM Valliammal Engineering College, Kattankulathur, Chennai
R Sumanc Francis Xavier Engineering College, Tirunelveli, Tamil Nadu, India

DOI: https://doi.org/10.34293/sijash.v9iS1-May.5942

Keywords: World Best Efficiency, p-Cu2ZnSn(Al)Se4, n-CdS Layer, Thin Film, Solar Cells

Abstract

Molybdenum (Mo) metal seed layer deposited on soda lime glass (SLG) substrate and then Mo thick metal layer deposited on Mo seed layer. Then the Copper zinc tin aluminum selenide p-Cu2ZnSn(Al)Se4 (CZTAS) thin film was fabricated on molybdenum (Mo) thin film layer. For making p-n junction a n-CdS thin films fabricated on p-CZTAS layer using chemical bath deposition method. The surface morphology of total device structure was investigated by Scanning electron microscopy (SEM). The observed world best level efficiency and its note worthy results are presented and discussed in this research work.